Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface
US9200381B2 · kind B2 · utility
26Cited by
46References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2005 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.