Pulsed plasma monitoring using optical sensor and a signal analyzer forming a mean waveform
US9200950B2 · kind B2 · utility
15Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Jun 5, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4238
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Monitoring of a pulsed plasma is described using an optical sensor. In one example, the invention includes receiving light emitted by a pulsed plasma in a semiconductor plasma processing chamber, sampling the received light at a sampling rate higher than a pulse rate of the pulsed plasma, wherein the sampled light has a periodic amplitude waveform and the sampling rate is higher than the period of the amplitude waveform, accumulating multiple sampled waveforms to form a mean waveform, and transmitting characteristics of the mean waveform to a chamber control tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.