Extended gate sensor for pH sensing
US9201041B2 · kind B2 · utility
55Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2013 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Dec 6, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensing device includes a substrate having a source region and a drain region formed therein. A gate structure is formed over the substrate and includes a gate dielectric and a gate conductor. The gate conductor is formed on the gate dielectric and disposed between the source region and the drain region. A dielectric layer is formed over the substrate and has a depth configured to form a well over the gate conductor. A gate extension is formed in contact with or as part of the gate conductor and including a conductive material covering one or more surfaces of the well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.