Patent · US Active

Thermal anneal using word-line heating element

US9202572B2 · kind B2 · utility

8Cited by
7References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 5, 2013
Grant dateDec 1, 2015
Priority date
Expiry dateDec 5, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/324
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In response to detecting an event during operation of an integrated-circuit memory device containing charge-storing memory cells, an electric current is enabled to flow through a word line coupled to the charge-storing memory cells for a brief interval to heat the charge-storing memory cells to an annealing temperature range.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.