Mark D. Kellam
30Patents
12h-index
38Co-inventors
81Inventor score
Filing activity: Apr 27, 1990 → Apr 25, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5907790A | Aluminum-palladium alloy for initiation of electroless plating | Emerging Cross-Sectional Technologies | 257 | Expired |
| US5767010A | Solder bump fabrication methods and structure including a titanium barrier layer | Electricity | 166 | Expired |
| US6222279A | Solder bump fabrication methods and structures including a titanium barrier layer | Electricity | 59 | Expired |
| US6025767A | Encapsulated micro-relay modules and methods of fabricating same | Electricity | 39 | Expired |
| US5702868A | High resolution mask programmable via selected by low resolution photomasking | Electricity | 28 | Expired |
| US5536959A | Self-aligned charge screen (SACS) field effect transistors and methods | Electricity | 26 | Expired |
| US5580668A | Aluminum-palladium alloy for initiation of electroless plating | Emerging Cross-Sectional Technologies | 23 | Expired |
| US8716780B2 | Three-dimensional memory array stacking structure | Electricity | 22 | Active |
| US5039625A | Maximum areal density recessed oxide isolation (MADROX) process | Emerging Cross-Sectional Technologies | 21 | Expired |
| US9305644B2 | Resistance memory cell | Physics | 16 | Active |
| US5479061A | Pleated sheet microelectromechanical transducer | Electricity | 12 | Expired |
| US5179316A | Electroluminescent display with space charge removal | Electricity | 12 | Expired |
| US9177655B2 | Pulse control for nonvolatile memory | Physics | 10 | Active |
| US9934851B2 | Resistance memory cell | Physics | 9 | Active |
| US9202572B2 | Thermal anneal using word-line heating element | Electricity | 8 | Active |
| US8908407B1 | Content addressable memory (“CAM”) | Physics | 7 | Active |
| US8847192B2 | Resistive switching devices having alloyed electrodes and methods of formation thereof | Electricity | 4 | Active |
| US10366751B2 | Resistance memory cell | Physics | 1 | Active |
| US10404908B2 | Optical systems and methods supporting diverse optical and computational functions | Physics | 1 | Active |
| US8487367B2 | Planar MOSFET with textured channel and gate | Electricity | 0 | Active |
| US11663138B2 | Heterogenous-latency memory optimization | Physics | 0 | Active |
| US12002513B2 | Self-annealing data storage system | Electricity | 0 | Active |
| US12292601B2 | Bus distribution using multiwavelength multiplexing | Electricity | 0 | Active |
| US12147351B2 | Heterogenous-latency memory optimization | Physics | 0 | Active |
| US12149289B2 | Systems and methods for bidirectional polarization signaling | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.