Directional SiO2 etch using low-temperature etchant deposition and plasma post-treatment
US9202745B2 · kind B2 · utility
1Cited by
3References
20Claims
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Key dates
| Filing date | Aug 22, 2014 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Aug 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH4F), and annealing the substrate to a first temperature to sublimate one or more volatile byproducts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.