Patent · US Active

Method for processing a carrier, a carrier, and a split gate field effect transistor structure

US9202815B1 · kind B1 · utility

1Cited by

11References

6Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Kerstin Kaemmer · Radebeul, DE
Thomas Bertrams · Dresden, DE
Henning Feick · Dresden, DE
Olaf Storbeck · Dresden, DE
Matthias Schmeide · Neustadt an der Donau, DE

Key dates

Filing date	Jun 20, 2014
Grant date	Dec 1, 2015
Priority date	—
Expiry date	Jun 20, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.