Buried SiGe oxide FinFET scheme for device enhancement

US9202917B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Kuo-Cheng Ching · Hsinchu, TW
• Chih-Hao Wang · Dashulong, TW
• Zhiqiang Wu · Plano, US
• Gwan Sin Chang · Hsinchu, TW

Key dates

• Filing date: Jul 29, 2013
• Grant date: Dec 1, 2015
• Expiry date: Dec 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

The present disclosure relates to a Fin field effect transistor (FinFET) device having a buried silicon germanium oxide structure configured to enhance performance of the FinFET device. In some embodiments, the FinFET device has a three-dimensional fin of semiconductor material protruding from a substrate at a position located between first and second isolation regions. A gate structure overlies the three-dimensional fin of semiconductor material. The gate structure controls the flow of charge carriers within the three-dimensional fin of semiconductor material. A buried silicon-germanium-oxide (SiGeOx) structure is disposed within the three-dimensional fin of semiconductor material at a position extending between the first and second isolation regions.