Image sensor having 3D photoelectric conversion device
US9202950B2 · kind B2 · utility
1Cited by
1References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 4, 2013 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Nov 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor includes a transfer gate formed over a substrate including front and back sides, a photoelectric conversion area formed in the substrate on one side of the transfer gate, a trench formed in the photoelectric conversion area and having a trench entrance located on the back side of the substrate, and a color filter formed over the backside of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.