Copper compatible chalcogenide phase change memory with adjustable threshold voltage
US9203024B2 · kind B2 · utility
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25Claims
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Key dates
| Filing date | Jul 25, 2007 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Mar 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8413
Abstract
A phase change memory cell may include two or more stacked or unstacked series connected memory elements. The cell has a higher, adjustable threshold voltage. A copper diffusion plug may be provided within a pore over a copper line. By positioning the plug below the subsequent chalcogenide layer, the plug may be effective to block copper diffusion upwardly into the pore and into the chalcogenide material. Such diffusion may adversely affect the electrical characteristics of the chalcogenide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.