Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions
US9206507B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 27, 2012 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Sep 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD)2, wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni—N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni—N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.