Automatic optimization of etch process for accelerated yield ramp with matched charged particle multi-beam systems
US9207539B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2015 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31798
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use write and inspection tools that share the same or substantially the same stage and the same or substantially the same designs for respective arrays of multiple charged particle beam columns, and that access the same design layout database to target and pattern or inspect features. By using design-matched charged particle beam tools, correlation of defectivity is preserved between inspection imaging and the design layout database. As a result, image-based defect identification and maskless design correction, of random and systematic errors, can be performed directly in the design layout database, enabling a fast yield ramp.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.