Methods for fabricating integrated circuits including generating photomasks for directed self-assembly
US9208275B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | May 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating a photomask for forming a DSA directing pattern overlying a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the photomask includes inputting DSA target patterns. The DSA target patterns are grouped into groups including a first group and a group boundary is defined around the first group as an initial OPC mask pattern. A circle target is generated around each of the DSA target patterns in the first group to define a merged circle target boundary. The initial OPC mask pattern is adjusted and/or iteratively updated using the merged circle target boundary to generate an output final OPC mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.