Substrate cleaning method and substrate cleaning device
US9209010B2 · kind B2 · utility
2Cited by
4References
24Claims
0Family size
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Inventors
Key dates
| Filing date | Feb 3, 2011 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Dec 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67028
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate cleaning method includes removing a foreign material attached to a substrate while preventing deterioration of the substrate and any film formed on or above the substrate. A cleaning gas at a pressure between 0.3 MPa and 2.0 MPa is sprayed towards a wafer W with attached foreign material 22 placed in a near-vacuum, producing clusters 21 made up of a multitude of gas molecules 20, and the clusters 21 collide with the wafer W without undergoing ionization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.