Electric pressure systems for control of plasma properties and uniformity
US9209032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Mar 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.