Patent · US Active

Methods of localized hardening of dicing channel by applying localized heat in wafer kerf

US9209082B2 · kind B2 · utility

0Cited by

5References

19Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Matthew G. Bausch · South Burlington, US
Eric Marz · Williston, US
Benjamin J. Pierce · South Burlington, US
Jared P. Yanofsky · Burlington, US

Key dates

Filing date	Jan 3, 2014
Grant date	Dec 8, 2015
Priority date	—
Expiry date	Mar 6, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/32
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Various embodiments include localized hardening of dicing channels in an integrated circuit (IC) wafer. In some embodiments, a method includes: applying localized heat to a metal interconnect in a wafer kerf on an IC wafer using a heat source; and removing the heat source to cool the metal interconnect after the applying of the localized heat to the metal interconnect, wherein the applying of the heat and the removing of the heat source increases a hardness of the metal interconnect.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.