Integrated monolithic galvanic isolator

US9209091B1 · kind B1 · utility

Assignee

• Maxim Integrated Products, Inc. · US

Inventors

• David Harper · Battle Ground, US
• Sudarsan Uppili · Portland, US
• Fanling H. Yang · Beaverton, US
• David L. Snyder · Princeton, US
• Christopher S. Blair · Lake Oswego, US
• Guillaume Bouche · Albany, US

Key dates

• Filing date: Aug 5, 2011
• Grant date: Dec 8, 2015
• Expiry date: Oct 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A semiconductor device is described that includes a first electrical circuit and a second electrical circuit formed on a semiconductor on insulator wafer. The semiconductor on insulator wafer has a layer of semiconducting material formed over a buried layer of insulating material formed over a supporting layer of material. A wide deep trench is formed in the semiconductor on insulator wafer to galvanically isolate the first electrical circuit from the second electrical circuit. The first electrical circuit and the second electrical circuit are coupled together for exchanging energy between the galvanically isolated electrical circuits.