High electron mobility transistor and manufacturing method thereof
US9209266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Nov 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a manufacturing method of a high electron mobility transistor. The method includes: forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate; forming a second insulating film having a second opening within the first opening, the second opening exposing a part of the substrate; forming a third insulating film having a third opening within the second opening, the third opening exposing a part of the substrate; etching a part of the first insulating film, the second insulating film and the third insulating film so as to expose the source electrode and the drain electrode; and forming a T-gate electrode on a support structure including the first insulating film, the second insulating film and the third insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.