Fin field effect transistor

US9209300B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hung-Ta Lin · Hsinchu, TW
• Chu-Yun Fu · Hsinchu, TW
• Shin-Yeh Huang · Hsinchu, TW
• Shu-Tine Yang · Zhubei City, TW
• Hung-Ming Chen · Zhubei City, TW

Key dates

• Filing date: Jul 22, 2014
• Grant date: Dec 8, 2015
• Expiry date: Jul 22, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A fin field effect transistor including a first insulation region and a second insulation region over a top surface of a substrate. The first insulation region includes tapered top surfaces, and the second insulation region includes tapered top surfaces. The fin field effect transistor further includes a fin extending above the top surface between the first insulation region and the second insulation region. The fin includes a first portion having a top surface below the tapered top surfaces of the first insulation region. The fin includes a second portion having a top surface above the tapered top surfaces of the first insulation region.