Regulating interface layer growth with N2O for two-terminal memory
US9209396B2 · kind B2 · utility
6Cited by
1References
20Claims
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Key dates
| Filing date | Jun 6, 2013 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Jan 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/845
Abstract
Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can be grown on the silicon bearing layer, and the growth of the interface layer can be regulated with N2O plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.