Chemical vapor deposition method
US9212420B2 · kind B2 · utility
5Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2010 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Dec 8, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.