Technique for temperature measurement and calibration of semiconductor workpieces using infrared
US9212949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Jul 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An improved system and method of measuring the temperature of a workpiece in a processing chamber is disclosed. Because silicon has very low emissivity in the infrared band, a coating is disposed on at least a portion of the workpiece. This coating may be graphite or any other material that can be readily applied, and has a relatively constant emissivity over temperature in the infrared spectrum. In one embodiment, a coating of graphite is applied to a portion of the workpiece, allowing the temperature of the workpiece to be measured by observing the temperature of the coating. This technique can be used to calibrate a processing chamber, validate operating conditions within the processing chamber, or to develop a manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.