Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip

US9214442B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Karsten Guth · Soest, DE
• Holger Torwesten · Neubiberg, DE

Key dates

• Filing date: Mar 19, 2007
• Grant date: Dec 15, 2015
• Expiry date: Jul 24, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a power semiconductor module, a copper-containing first soldering partner, a connection layer, and a copper-containing second soldering partner are arranged successively and fixedly connected with one another. The connection layer has a portion of intermetallic copper-tin phases of at least 90% by weight. For producing such a power semiconductor module the soldering partners and the solder arranged there between are pressed against one another with a predefined pressure and the solder is melted. After termination of a predefined period of time the diffused copper and the tin from the liquid solder form a connection layer comprising intermetallic copper-tin phases, the portion of which is at least 90% by weight of the connection layer created from the solder layer.