Patent · US Active

Method for making a semiconductor structure with a buried ground plane

US9214515B2 · kind B2 · utility

1Cited by

3References

14Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Yannick Le Tiec · Crolles, FR
Francois Andrieu · Meylan, FR

Key dates

Filing date	Jun 10, 2013
Grant date	Dec 15, 2015
Priority date	—
Expiry date	Aug 12, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76254
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for making a semiconducting structure, including:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.