Amorphous spacerlattice spacer for perpendicular MTJs
US9214624B2 · kind B2 · utility
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Key dates
| Filing date | Feb 19, 2013 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Feb 19, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.