Patent · US Active

Response to tamper detection in a memory device

US9218509B2 · kind B2 · utility

3Cited by
10References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 7, 2014
Grant dateDec 22, 2015
Priority date
Expiry dateFeb 8, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2221/2143
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In response to a tamper-attempt indication, a memory device selectively disables one or more memory operations. Disabling can be accomplished by different techniques, including altering bias voltages associated with performing the memory operation, gating off a current needed for performing the memory operation, and limiting the needed current to a magnitude below the threshold magnitude required for the operation. After disabling the memory operation, a mock current can be generated. The mock current is intended to mimic the current normally expended during the memory operation when not disabled, thereby leading a user to believe that the device is continuing to operate normally even though the memory operation that is being attempted is not actually being performed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.