Self-referenced sense amplifier for spin torque MRAM
US9218865B2 · kind B2 · utility
9Cited by
22References
20Claims
0Family size
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Key dates
| Filing date | Sep 23, 2014 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Sep 23, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Circuitry and a method provide a plurality of timed control and bias voltages to sense amplifiers and write drivers of a spin-torque magnetoresistive random access memory array for improved power supply noise rejection, increased sensing speed with immunity for bank-to-bank noise coupling, and reduced leakage from off word line select devices in an active column.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.