Patent · US Active

Methods of doping substrates with ALD

US9218973B2 · kind B2 · utility

2Cited by

4References

12Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Aneesh Nainani · Palo Alto, US
Mathew Abraham · San Diego, US
Er-Xuan Ping · Boise, US

Key dates

Filing date	Jun 13, 2013
Grant date	Dec 22, 2015
Priority date	—
Expiry date	Jun 13, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0241
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.