Aneesh Nainani
6Patents
2h-index
13Co-inventors
37Inventor score
Filing activity: Dec 1, 2011 → Nov 12, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9570307B2 | Methods of doping substrates with ALD | Electricity | 5 | Active |
| US9378941B2 | Interface treatment of semiconductor surfaces with high density low energy plasma | Electricity | 3 | Active |
| US9218973B2 | Methods of doping substrates with ALD | Electricity | 2 | Active |
| US9543172B2 | Apparatus for providing and directing heat energy in a process chamber | Electricity | 0 | Active |
| US8933488B2 | Heterostructure field effect transistor with same channel and barrier configuration for PMOS and NMOS | Electricity | 0 | Active |
| US8969924B2 | Transistor-based apparatuses, systems and methods | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.