Semiconductor film with adhesion layer and method for forming the same
US9219120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2013 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Oct 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Presented herein is a method for forming a semiconductor film using an adhesion layer, comprising providing an oxide layer disposed over a substrate, forming at least one adhesion layer over the oxide layer, and forming a film layer over the at least one adhesion layer in a same process step as the forming the at least one adhesion layer. Forming the at least one adhesion layer further comprises at least forming a first adhesion layer over the oxide layer and forming a second adhesion layer over the first adhesion layer. Forming the first adhesion layer comprises providing the terminating gas at a substantially constant first flow rate, and wherein the forming the second adhesion layer comprises ramping a flow rate of the terminating gas to a zero flow rate from the first flow rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.