Graded electron blocking layer

US9219189B2 · kind B2 · utility

Assignee

• Palo Alto Research Center Incorporated · US

Inventors

• John E. Northrup · Palo Alto, US
• Bowen Cheng · Atherton, US
• Christopher L. Chua · San Jose, US
• Thomas Wunderer · Palo Alto, US
• Noble M. Johnson · Menlo Park, US
• Zhihong Yang · San Jose, US
• Suk-Jung Choi · Palo Alto, US

Key dates

• Filing date: Sep 14, 2012
• Grant date: Dec 22, 2015
• Expiry date: May 19, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

A light emitting device includes a p-side heterostructure, an n-side heterostructure, an active region disposed between the p-side heterostructure and the n-side heterostructure. An electron blocking layer (EBL) disposed between the p-side heterostructure and the active region comprises an aluminum containing group-III-nitride alloy. An aluminum composition of the EBL decreases as a function of distance along a [0001] direction from the active region towards the p-side heterostructure over a majority of the thickness of the EBL.