Defect reduction in electrodeposited copper for semiconductor applications

US9222188B2 · kind B2 · utility

Assignee

• Enthone GmbH · US

Inventors

• John Commander · Old Saybrook, US
• Richard Hurtubise · Clinton, US
• Vincent Paneccasio, Jr. · Madison, US
• Xuan Lin · Northford, US
• Kshama Jirage · Palo Alto, US

Key dates

• Filing date: Jan 8, 2008
• Grant date: Dec 29, 2015
• Expiry date: Jan 8, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05K3/423
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.