Charged particle beam device and overlay misalignment measurement method
US9224575B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2013 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Oct 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An overlay misalignment amount of patterns on different layers can be accurately measured. To achieve this, a charged particle beam device includes: a charged particle beam source irradiating a sample with a charged particle beam under one irradiation condition; a first detector that detects a signal generated front a first pattern formed on a first layer in an irradiation region; a second detector that detects a signal generated from a second pattern formed on a second layer in the irradiation region at a same time as the first detector; and an image processing unit that calculates an overlay misalignment amount between the first pattern and the second pattern based on a first detection signal and a second detection signal output by the first detector and the second detector, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.