Semiconductor device and method of forming TSV interposer with semiconductor die and build-up interconnect structure on opposing surfaces of the interposer
US9224647B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2011 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jul 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate with first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the substrate. A first conductive layer is formed over the first surface of the substrate electrically connected to the conductive vias. A first semiconductor die is mounted over the first surface of the substrate. The first semiconductor die and substrate are mounted to a carrier. An encapsulant is deposited over the first semiconductor die, substrate, and carrier. A portion of the second surface of the substrate is removed to expose the conductive vias. An interconnect structure is formed over a surface of the substrate opposite the first semiconductor die. A second semiconductor die can be stacked over the first semiconductor die. A second semiconductor die can be mounted over the first surface of the substrate adjacent to the first semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.