Edge termination structure with trench isolation regions

US9224806B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stephan Voss · Munich, DE
• Alexander Breymesser · Villach, AT
• Hans-Joachim Schulze · Taufkirchen, DE
• Erich Griebl · Dorfen, DE
• Oliver Haeberlen · Villach, AT
• Andreas Moser · Cugnaux, FR

Key dates

• Filing date: Aug 7, 2013
• Grant date: Dec 29, 2015
• Expiry date: Nov 12, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0291
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor body and an edge termination structure. The edge termination structure comprises a first oxide layer, a second oxide layer, a semiconductor mesa region between the first oxide layer and the second oxide layer, and a doped field region comprising a first section in the semiconductor mesa region, and a second section in a region below the semiconductor mesa region. The second section overlaps the first and the second oxide layers in the region below the semiconductor mesa region.