Method for forming a buried metal layer structure
US9224921B2 · kind B2 · utility
1Cited by
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24Claims
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Key dates
| Filing date | Nov 16, 2011 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Nov 17, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a method for fabricating a structure including a semiconductor material comprising: a) implanting one or more ion species to form a weakened region delimiting at least one seed layer in a substrate of semiconductor material, b) forming, before or after step a), at least one metallic layer on the substrate in semiconductor material, c) assembling the at least one metallic layer with a transfer substrate, then fracturing the implanted substrate at the weakened region, and d) forming at least one layer in semiconductor material on the at least one seed layer, for example, by epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.