Method for treatment of deposition reactor
US9228259B2 · kind B2 · utility
497Cited by
216References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Jan 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.