Methods for depositing fluorine/carbon-free conformal tungsten

US9230815B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Xinyu Fu · Pleasanton, US
• Srinivas Gandikota · Santa Clara, US
• Avgerinos V. Gelatos · Scotts Valley, US
• Atif Noori · Saratoga, US
• Mei Chang · San Jose, US
• David Thompson · San Jose, US
• Steve Ghanayem · Los Altos, US

Key dates

• Filing date: Oct 24, 2013
• Grant date: Jan 5, 2016
• Expiry date: Oct 24, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.