Integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices
US9230835B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Mar 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices are provided herein. In some embodiments, an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices may include a first deposition chamber configured to deposit a first layer atop the substrate, the first layer comprising titanium oxide (TiO2) or selenium (Se); a second deposition chamber configured to deposit a second layer atop the first layer, the second layer comprising titanium; a third deposition chamber configured to deposit a third layer atop the second layer, the third layer comprising one of titanium nitride (TiN) or tungsten nitride (WN).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.