Patent · US Active

Feature patterning methods and structures thereof

US9230906B2 · kind B2 · utility

0Cited by

3References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Schulz · Austin, US
Sergei Postnikov · Grenoble, FR

Key dates

Filing date	Mar 25, 2014
Grant date	Jan 5, 2016
Priority date	—
Expiry date	Mar 25, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.