Semiconductor device having vertical channel
US9231066B2 · kind B2 · utility
1Cited by
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14Claims
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Key dates
| Filing date | Mar 11, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Jun 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
Abstract
A vertical-channel semiconductor device includes an active pillar including a channel region, a gate located at a sidewall of the active pillar, a buried bit-line formed below the active pillar, and an insulation film formed below the buried bit-line. Some parts of the buried bit-line are replaced with an insulation film, such that a bit-line junction leakage is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.