Method and apparatus of forming metal compound film, and electronic product
US9234275B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2013 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Dec 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming a film of metal compound of first and second materials on an object to be processed, one of the first and second materials being metal, which includes: supplying a raw material gas containing the first material to the object such that the first material is adsorbed onto the object; supplying a raw material gas containing the second material to the object with the first material adsorbed thereon such that the second material is adsorbed onto the object with the first material adsorbed thereon; and supplying a third material different from the first and second materials onto the first and second materials adsorbed onto the object such that the first to third materials are chemically combined with one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.