Patent · US Active

Wafer, a method for processing a wafer, and a method for processing a carrier

US9236241B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Thoralf Kautzsch · Dresden, DE
Alessia Scire · Dresden, DE
Steffen Bieselt · Wehlen, DE
Uwe Rudolph · Dresden, DE
Marco Mueller · Villach, AT
Boris Binder · Dresden, DE

Key dates

Filing date	May 5, 2014
Grant date	Jan 12, 2016
Priority date	—
Expiry date	May 10, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/13
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to various embodiments, a method for processing a wafer may include: forming at least one hollow chamber and a support structure within the wafer, the at least one hollow chamber defining a cap region of the carrier located above the at least one hollow chamber and a bottom region of the carrier located below the at least one hollow chamber and an edge region surrounding the cap region of the carrier, wherein a surface area of the cap region is greater than a surface area of the edge region, and wherein the cap region is connected to the bottom region by the support structure; removing the cap region in one piece from the bottom region and the edge region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.