UV protection for lightly doped regions
US9236273B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2013 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Jul 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a lightly doped region such as the base region of a bipolar junction transistor within a semiconductor body. The device further includes a UV barrier layer formed over the lightly doped region. The UV barrier protects the lightly doped region from damage that can occur during high energy plasma etching or UV irradiation to erase EPROM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.