Method for multiplying pattern density by crossing multiple patterned layers
US9240329B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 17, 2015 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Feb 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques disclosed herein include increasing pattern density for creating high-resolution contact openings, slots, trenches, and other features. A first line-generation sequence creates a first layer of parallel lines of alternating and differing material by using double-stacked mandrels, sidewall image transfer, and novel planarization schemes. This line-generation sequence is repeated on top of the first layer of parallel lines, but with the second layer of parallel lines of alternating and differing material being oriented to elevationally cross lines of the first layer. Etching selective to one of the materials within the double stack of parallel lines results in defining a pattern of openings, slots, etc., which can be transferred into underlying layers. Such patterning techniques herein can quadruple a density of features in a given pattern, which can be described as created a pitch quad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.