Ternary metal nitride formation by annealing constituent layers
US9243321B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2013 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Apr 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Ternary metal nitride layers suitable for thin-film resistors are fabricated by forming constituent layers of complementary components (e.g., binary nitrides of the different metals, or a binary nitride of one metal and a metallic form of the other metal), then annealing the constituent layers to interdiffuse the materials, thus forming the ternary metal nitride. The constituent layers (e.g., 2-5 nm thick) may be sputtered from binary metal nitride targets, from metal targets in a nitrogen-containing ambient, or from metal targets in an inert ambient. Optionally, a nitrogen-containing ambient may also be used for the annealing. The annealing may be 10 seconds to 10 minutes at 500-1000° C. and may also process another component on the same substrate (e.g., activate a diode).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.