Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device
US9245608B2 · kind B2 · utility
78Cited by
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16Claims
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Key dates
| Filing date | Aug 10, 2012 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Jun 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.