Logic high-dielectric-constant (HK) metal-gate (MG) one-time-programming (OTP) memory device sensing method
US9245648B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Sep 26, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5692
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a one-time-programming (OTP) memory cell, dual-voltage sensing is utilized to determine whether the memory cell has experienced a non/soft breakdown or a hard breakdown. The drain current of the memory cell is read when the gate voltage is at a first predetermined voltage, and if the read drain current is greater than a predetermined current level, then a hard breakdown is detected. One or more additional readings of the current may be obtained to determine that a hard breakdown has occurred. If the read drain current is less than the predetermined current level, then a non/soft breakdown is detected. The threshold voltage of the memory cell may be shifted, and a second reading of the drain current may be obtained when the gate voltage is at a second predetermined voltage in case the memory cell experiences a non/soft breakdown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.