Plasma treatment of low-K surface to improve barrier deposition
US9245793B2 · kind B2 · utility
6Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2013 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Jan 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.