Patent · US Active

Method for postdoping a semiconductor wafer

US9245811B2 · kind B2 · utility

6Cited by

11References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Reinhard Ploss · Munich, DE
Helmut Oefner · Zorneding, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Aug 8, 2014
Grant date	Jan 26, 2016
Priority date	—
Expiry date	Aug 8, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/53
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors, and a neutron irradiation. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, a temperature of the thermal process, and an irradiation dose of the neutron irradiation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.